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The Etching Morphology of Silver Study by Inductively Coupled Ar-Based Plasmas

机译:电感耦合Ar基等离子体的银研究蚀刻形态

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The main difficulty of silver etching is that non-volatile by-products are easily generated during the etching process, these by-products cover the surface of the material or mask, which affects the etching and difficult to remove. In this paper, we have studied the influence of different gas on silver etching, and compared the morphology before and after wet stripping. In the experiment, under the condition of a larger flow rate of Ar, larger bias voltage and a small amount of CH4 were added, and the etching results were better.
机译:银蚀刻的主要难度是在蚀刻过程中容易产生非易失性的副产物,这些副产物覆盖材料或面膜的表面,这影响蚀刻且难以去除。 在本文中,我们研究了不同气体对银蚀刻的影响,并比较了湿剥离前后的形态。 在实验中,在AR的较大流速的条件下,加入较大的偏压和少量CH4,并且蚀刻结果更好。

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