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Enhancing the photoluminescence properties of single epitaxial gaas quantum dots using optical antennas

机译:使用光学天线增强单个外延Gaas量子点的光致发光特性

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The light emission properties of a single quantum system may be significantly modified by placing the emitter close to a nanostructure. Plasmon resonant metal structures are particularly interesting as the electromagnetic field may be significantly enhanced at the plasmon resonance. This allows controlling, e.g., the excitation and emission rate [1] as well as the emission pattern of the emitter [2], offering exciting possibilities in both fundamental light-matter studies as well as in applications.
机译:通过将发射极置于纳米结构附近,可以显着地修改单量子系统的发光特性。等离子体共振金属结构特别令人感兴趣,因为在等离子体共振时电磁场可能会大大增强。这样就可以控制激发和发射速率[1]以及发射器的发射模式[2],从而在基础光学研究和应用中都提供了令人兴奋的可能性。

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