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Enhancing the photoluminescence properties of single epitaxial gaas quantum dots using optical antennas

机译:使用光天线增强单个外延GaAs量子点的光致发光特性

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The light emission properties of a single quantum system may be significantly modified by placing the emitter close to a nanostructure. Plasmon resonant metal structures are particularly interesting as the electromagnetic field may be significantly enhanced at the plasmon resonance. This allows controlling, e.g., the excitation and emission rate [1] as well as the emission pattern of the emitter [2], offering exciting possibilities in both fundamental light-matter studies as well as in applications.
机译:可以通过将发射器靠近靠近纳米结构来显着地修改单量子系统的发光特性。 等离子体谐振金属结构特别有趣,因为电磁场可以在等离子体共振下显着增强。 这允许控制,例如激发和发射率[1]以及发射器的发射图案[2],在基本的光学研究以及应用中提供令人兴奋的可能性。

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