W-band Penta-Composite Channel InAlAs/InGaAs Metamorphic HEMT for High Power Application and Comparison with Pseudomorphic HEMT

摘要

Advance device design of novel penta-composite channel of 0.25 urn InAlAs/InGaAs MHEMT has been reported for the first time in composite channel HEMT. Highest Indium mole fraction of 0.78 in channel and total channel thickness of 140 A was found to be an optimized structure. It has both higher ID of 1029 mA/mm and flatterer gm of 648 mS/mm at VDS of 1.3 V. AC analysis results fT of 125 GHz andfmwc of 250 GHz, which makes the device useful for W-band Power amplifier applications. Comparison between MHEMT and PHEMT has also been emphasized with respect to transconductance (gj and drain current (ID).