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机译:使用0.1 / spl mu / m InAlAs / InGaAs变质HEMT技术的W波段三分频器
HEMT circuits; III-V semiconductors; aluminium compounds; frequency dividers; gallium arsenide; indium compounds; injection locked oscillators; millimetre wave mixers; millimetre wave oscillators; 0.1 micron; 12 mW; 56 to 100 GHz; 6.1 GHz; InAlAs-InGaAs; W-band divide;
机译:采用两步嵌入式栅极技术的高性能0.1- / splμ/ m栅极增强模式InAlAs / InGaAs HEMT
机译:W波段高增益钝化0.15 / spl mu / m InAlAs / InGaAs HEMT的优化的栅漏反馈电容
机译:使用反向InAlAs缓冲液在GaAs上的0.1 / spl mu / m高性能变质In / sub 0.32 / Al / sub 0.68 / As / In / sub 0.33 / Ga / sub 0.67 / As HEMT
机译:采用0.1μmInAlAs / InGaAs / InP HEMT技术的单片W波段三级LNA
机译:从0.1栅极InGaAs / InAlAs / GaAs变质HEMT产生的fmax = 433GHz
机译:采用Inalas / InGaas HEmT的W波段单片混频器。