F-doped SiOCN films with low dielectric constant have been prepared using SiH4, C2F6 and N2O as reactants by PECVD, and characterized by X-ray photoelectron spectroscopy (XPS), capacitance -voltage (C-V) and current-voltage (I–V) measurements, and nano-indenter. With an increment of the flow rate of C2F6, the concentrations of fluorine and carbon incorporated in the films increase, and the concentration of nitrogen decreases. This leads to a decrease in the dielectric constant of the film. When the flow rate of C2F6 is 750 sccm, the percentages of C and F elements amount to 5.2% and 9.9%, respectively. Meanwhile, the resulting dielectric constant is reduced to 2.6, and the leakage current density is lower than 3×10−8 A/cm2 at 1MV/cm. The hardness and Young''s modulus of the films are higher than 3 GPa and 84 GPa, respectively. It is thus believed that the introduction of carbon and fluorine can lower the dielectric constant of the films, and the presence of N can improve the mechanical properties of film.
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机译：利用SiH 4 ，C 2 F 6 和N 2 O作为通过PECVD形成的反应物，并通过X射线光电子能谱（XPS），电容-电压（CV）和电流-电压（IV）测量以及纳米压头进行表征。随着C 2 F 6 流量的增加，膜中所含的氟和碳的浓度增加，而氮的浓度减少。这导致膜的介电常数降低。当C 2 F 6 的流量为750 sccm时，C和F元素的百分比分别为5.2％和9.9％。同时，在1MV / cm下，所得的介电常数降低到2.6，并且漏电流密度低于3×10 -8 A / cm 2 。薄膜的硬度和杨氏模量分别高于3 GPa和84 GPa。因此认为，碳和氟的引入可以降低膜的介电常数，并且N的存在可以改善膜的机械性能。
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