F-doped SiOCN films with low dielectric constant have been prepared using SiH4, C2F6 and N2O as reactants by PECVD, and characterized by X-ray photoelectron spectroscopy (XPS), capacitance -voltage (C-V) and current-voltage (I–V) measurements, and nano-indenter. With an increment of the flow rate of C2F6, the concentrations of fluorine and carbon incorporated in the films increase, and the concentration of nitrogen decreases. This leads to a decrease in the dielectric constant of the film. When the flow rate of C2F6 is 750 sccm, the percentages of C and F elements amount to 5.2% and 9.9%, respectively. Meanwhile, the resulting dielectric constant is reduced to 2.6, and the leakage current density is lower than 3×10−8 A/cm2 at 1MV/cm. The hardness and Young's modulus of the films are higher than 3 GPa and 84 GPa, respectively. It is thus believed that the introduction of carbon and fluorine can lower the dielectric constant of the films, and the presence of N can improve the mechanical properties of film.
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机译：使用SIH 4 ，C 2 和N 2 O作为PECVD的反应物，并通过X射线光电子能谱（XPS），电容 - 电压（CV）和电流 - 电压（I-V）测量和纳米压痕。增量的C 2 F 6 ，掺入薄膜中的氟和碳的浓度增加，氮的浓度降低。这导致膜的介电常数减小。当C 2 F 6 为750 sccm时，C和F元素的百分比分别为5.2％和9.9％。同时，所得介电常数降低至2.6，漏电流密度低于3×10 -8 / cm 2 ，在1mV / cm。薄膜的硬度和杨氏模量分别高于3GPa和84GPa。因此认为碳和氟的引入可以降低薄膜的介电常数，并且N的存在可以改善薄膜的机械性能。
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