A novel cylinder-type MIM capacitor in porous low-k film (CAPL) for embedded DRAM with advanced CMOS logics

摘要

A novel cylinder-type metal-insulator-metal (MIM) capacitor in porous low-k film (CAPL) is proposed for embedded DRAMs (eDRAMs). The CAPL removes long bypass-contacts (BCT) with high resistance, which have been used to connect transistors with Cu interconnects by way of the MIM capacitor layer. A key technical challenge for the CAPL integration is control of pore structure in the low-k film to avoid metal contamination during the gas-phase deposition of the MIM electrode (BE) on the porous low-k film. A molecular-pore-stack (MPS) SiOCH film (k=2.5) with very small pores (0.4 nm-diameter) is found to be the best candidate for the CAPL structure, applicable to eDRAM with high performance logics for 28 nm-node and beyond.