Development of Embedded Three-Dimensional 35-nF/mm2 MIM Capacitor and BiCMOS Circuits Characterization

Giraudin J.-G..; Badets F..; Blanc J.-P..; Chataigner E..; Chappaz C..; Regolini J.L.; Delpech P..

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Development of Embedded Three-Dimensional 35-nF/mm2 MIM Capacitor and BiCMOS Circuits Characterization

机译：嵌入式三维35nF / mm2 MIM电容器的开发和BiCMOS电路特性

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This paper summarizes the electrical characterization of MIM capacitor realized in three dimensions. Manufacturing of the device is described, as well as an electrical comparison of three dielectrics, Si3N4, Al2O3

机译：本文总结了从三个方面实现的MIM电容器的电气特性。描述了该器件的制造，以及三种电介质Si3N4，Al2O3

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来源
《IEEE Journal of Solid-State Circuits》 |2007年第9期|p.1842-1850|共9页
作者
Giraudin J.-G..; Badets F..; Blanc J.-P..; Chataigner E..; Chappaz C..; Regolini J.L.; Delpech P..;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
关键词
BiCMOS integrated circuits; MIM devices; MOCVD; alumina; atomic layer deposition; capacitors; dielectric materials; high-pass filters; leakage currents; phase locked oscillators; silicon compounds; tantalum compounds; voltage-controlled oscillators; ALD; Al2/sub;

机译：BiCMOS集成电路;MIM器件;MOCVD;氧化铝;原子层沉积;电容器;电介质;高通滤波器;漏电流;锁相振荡器;硅化合物;钽化合物;压控振荡器;ALD;Al2 / sub;

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1. High frequencies characterization of Cu-MIM capacitors in parallel configuration for advanced integrated circuits [J] . J. Piquet, C. Bermond, M. Thomas, Microelectronic Engineering . 2006,第11a12期

机译：用于高级集成电路的并联配置中的Cu-MIM电容器的高频特性
2. A Low-Leakage Body-Guarded Analog Switch in 0.35- src="/images/tex/26045.gif" alt="mumbox{m}"> BiCMOS and Its Applications in Low-Speed Switched-Capacitor Circuits [J] . Su Jin Jyh, Demirci Kemal S., Brand Oliver Circuits and Systems II: Express Briefs, IEEE Transactions on . 2015,第10期

机译：0.35- src =“ / images / tex / 26045.gif” alt =“ mumbox {m}”> BiCMOS的低泄漏人体保护模拟开关及其应用低速开关电容器电路中
3. BiCMOS operational amplifier with precise and stable DC gain for high-frequency switched capacitor circuits [J] . Baschirotto A., Alini R. Electronics Letters . 1991,第15期

机译：具有高精度和稳定DC增益的BiCMOS运算放大器，用于高频开关电容器电路
4. Demonstration of three-dimensional 35nF/mm2 MIM Capacitor integrated in BiCMOS Circuits [C] . Giraudin, J.C., Badets, Bipolar/BiCMOS Circuits and Technology Meeting, 2006 IEEE . 2006

机译：演示BiCMOS电路中集成的三维35nF / mm2 MIM电容器
5. Bipolar device characterization and design in CMOS technologies for the design of high-performance low-cost BiCMOS analog integrated circuits [D] . Larsen, Frode. 1994

机译：CMOS技术中的双极性器件表征和设计，用于设计高性能低成本BiCMOS模拟集成电路
6. I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor [O] . Giuseppe Luongo, Filippo Giubileo, Luca Genovese, 2017

机译：具有嵌入式MOS电容器的高响应性石墨烯/硅光电二极管的I-V和C-V表征
7. Power Grid Optimization in 3D Circuits U s i n g MIM and CMOS Decoupling Capacitors [O] . Pingqiang Zhou, Karthikk Sridharan, Sachin S. Sapatnekar 2016

机译：三维电路中的电网优化采用mIm和CmOs去耦电容

Development of Embedded Three-Dimensional 35-nF/mm2 MIM Capacitor and BiCMOS Circuits Characterization

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