Low-K/Cu CMOS-Based SoC Technology With 115-GHz f{sub}T, 100-GHz f{sub}(max), Low Noise 80-nm RF CMOS, High-Q MiM Capacitor, and Spiral Cu Inductor

摘要

Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz f{sub}T, 100-GHz f{sub}(max), and sub-l.0-dB NF{sub}(min) at 10 GHz have been fabricated by aggressive device scaling and layout optimization. High-Q MiM capacitor and spiral Cu inductors have been successfully implemented in the same chip by 0.13-μm low-K/Cu back end of integration line technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost and realized by the elaborated layout.