机译:基于65nm高频低噪声CMOS的RF SoC技术
Integration Technol. Dev. Dept., United Microelectron. Corp., Singapore, Singapore;
CMOS integrated circuits; MIM devices; MOSFET; capacitors; system-on-chip; deep-n-well isolation; frequency 2.4 GHz; frequency 220 GHz; frequency 250 GHz; frequency 5.8 GHz; high-frequency low-noise CMOS-based RF SoC technology; inductors; metal-insulator-metal capacitors; metal-oxide-metal capacitors; multi-poly-finger fabrication process; multi-poly-finger layout process; n+-well accumulation-mode MOS varactors; n-MOSFET; p+-guard-ring isolation; polysilicon-patterned ground shield; size 3.7 mum; size 60 nm; size 65 nm; 65 nm; $NF_{min}$; $Q$ factor; $f_{T}$; $f_{max}$; CMOS; inductor; metal–oxide–metal (MOM); radio frequency (RF); varactor;
机译:基于低K / Cu CMOS的SoC技术,具有115GHz f {sub} T,100GHz f {sub}(max),低噪声80nm RF CMOS,高Q MiM电容器和螺旋Cu电感器
机译:基于绝缘体上硅的技术MOSFET的高频四个噪声参数,用于设计低噪声RF集成电路
机译:在65 nm RF CMOS中与ESD网络共同设计的V波段低噪声放大器
机译:低功耗,高线性度,无电感,低噪声放大器,采用65nm CMOS技术进行有源分流反馈
机译:使用0.35微米CMOS技术的RF宽带低噪声放大器的设计。
机译:一种四通道低噪声读出IC用于空气流量测量使用热线风速计在0.18μmCMOS技术中
机译:高度集成的65纳米soC工艺,具有增强的数字和模拟电路功率/性能