Low-K/Cu CMOS logic based SoC technology for 10 Gb transceiver with 115 GHz f/sub T/, 80 GHz f/sub MAX/ RF CMOS, high-Q MiM capacitor and spiral Cu inductor

摘要

For the first time, foundry CMOS logic based RF technology is introduced for 10 Gb/s transceiver in which active and passive RF elements have been realized in a single chip. Superior RF CMOS of 115 GHz f/sub r/, 80 GHz f/sub MAX/, and 2.2 dB NF/sub min/ at 10 GHz has been fabricated by aggressive device scaling and layout optimization. High Q MiM capacitor and spiral Cu inductor have been successfully implemented in the same chip by 0.13 /spl mu/m low-K/Cu BEOL technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost but realized by elaborated layout. Triple well is introduced to provide superior substrate noise isolation by <10 dB suppression at 10 GHz and beyond.