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A 22nm High Performance and Low-Power CMOS Technology Featuring Fully-Depleted Tri-Gate Transistors, Self-Aligned Contacts and High Density MIM Capacitors

机译：采用全耗尽三栅极晶体管，自对准触点和高密度mIm电容器的22nm高性能和低功耗CmOs技术

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1. A 0.45–1 V Fully-Integrated Distributed Switched Capacitor DC-DC Converter With High Density MIM Capacitor in 22 nm Tri-Gate CMOS [J] . IEEE Journal of Solid-State Circuits . 2014,第4期

机译：在22 nm三栅极CMOS中具有高密度MIM电容器的0.45–1 V全集成分布式开关电容器DC-DC转换器
2. High performance fully-depleted tri-gate CMOS transistors [J] . Doyle B.S., Datta S., Doczy M., IEEE Electron Device Letters . 2003,第4期

机译：高性能全耗尽三栅极CMOS晶体管
3. A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS [J] . S. H. Kulkarni, Z. Chen, B. Srinivasan, IEEE Journal of Solid-State Circuits . 2016,第4期

机译：一种高密度金属熔丝技术，具有一个1.6 V可编程低压位单元，并在22 nm Tri-Gate CMOS中集成了1 V电荷泵
4. A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors [C] . Auth C., Allen C., Blattner A., VLSI Technology (VLSIT), 2012 Symposium on . 2012

机译：22nm高性能和低功耗CMOS技术，具有完全耗尽的三栅晶体管，自对准触点和高密度MIM电容器
5. High-Performance, Low-Power, and Compact CMOS VLSI Circuits with Carbon Nanotube Transistor Technology [D] . Sun, Yanan. 2014

机译：具有碳纳米管晶体管技术的高性能，低功耗和紧凑型CMOS VLSI电路
6. A 22nm SoC Platform Technology Featuring 3-D Tri-Gate and High-k/Metal Gate, Optimized for Ultra Low Power, High Performance and High Density SoC Applications [O] . 2013

机译：具有3-D Tri-Gate和高k /金属栅极的22nm SoC平台技术，针对超低功耗，高性能和高密度SoC应用进行了优化

A 22nm High Performance and Low-Power CMOS Technology Featuring Fully-Depleted Tri-Gate Transistors, Self-Aligned Contacts and High Density MIM Capacitors

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