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Mechanism of snapback failure induced by the latch-up test in high-voltage CMOS integrated circuits

机译:高压CMOS集成电路中闩锁测试引起的旋转响应失效机制

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An electrical overstress failure induced by a latch-up test is studied in high-voltage integrated cricuits. The latchup test resulted in damage to the output NMOSFET due to snapbach and also resulted in a latch-up in the internal circuits. These mechanism
机译:在高压集成的ricuits中研究了通过闩锁测试引起的电动反射故障。闩锁测试导致由于Snapbach引起的输出NMOSFET损坏,并且也导致内部电路中的闩锁。这些机制

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