High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

摘要

We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET I_DSAT = 825/950 ¿A/¿m (circumference-normalized) or 2592/2985 ¿A/¿m (diameter-normalized) at supply voltage V_DD = 1 V and off-current I_OFF = 15 nA/¿m. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed.