Resolution Enhancement Technique using Oxidation Process with Nitride Hardmask Process

摘要

In lithography process, resolution enhancement technique (RET) which makes us use same lithographic equipments and materials is one of most important area to enhance development speed of device. The studies for RET have widely been done and the examples of RET are modified illumination, phase shifted mask and double exposure. The most studies have been done in lithography area. We think that area of RET study is not only lithography but also overall patterning including etching process. In this paper, we develop new RET and simultaneous patterning of Shallow Trench Isolation(STI) with gate pattern which is using oxidation process of silicone. When we use nitride hard mask process and etching with this oxidation process, we observed to achieve small resolution. Also we investigate process capability of this new process in terms of CD control, STI height and so on.