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机译:使用基于循环CHF_3的反应离子刻蚀工艺对垂直轮廓纳米结构进行氮化硅硬掩模制造
Electronics Laboratory, Swiss Federal Institute of Technology, Gloriastrasse 35, CH-8092 Zurich, Switzerland;
Electronics Laboratory, Swiss Federal Institute of Technology, Gloriastrasse 35, CH-8092 Zurich, Switzerland,Nanoscale Superconductivity and Magnetism and Pulsed Fields Group, INPAC, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium;
Electronics Laboratory, Swiss Federal Institute of Technology, Gloriastrasse 35, CH-8092 Zurich, Switzerland;
Electrochemistry Laboratory, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland;
Electrochemistry Laboratory, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland;
FIRST Center for Micro- and Nanoscience, Swiss Federal Institute of Technology, Wolfgang-Pauli-Strasse 10, CH-8093 Zurich, Switzerland;
机译:使用基于循环CHF3的反应离子刻蚀工艺对垂直轮廓纳米结构进行氮化硅硬掩模制造
机译:采用循环自限型等离子体工艺制造原子精密装置:涉及硅,氮化硅和二氧化硅
机译:使用近场扫描光学光刻和硅各向异性湿法刻蚀工艺制备高纵横比的硅纳米结构
机译:硅氧化物和氮化物的在线等离子刻蚀,用于干法制备硅太阳能电池
机译:用于嵌入式纳米磁器件制造的氮化硅薄膜的纳米级反应离子刻蚀
机译:硅的低温腐蚀:垂直微悬臂梁母模的另一种方法进行制造
机译:自掩膜硅纳米结构在深反应离子刻蚀工艺中的制备与应用