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Modeling and Characterization of On-Chip Inductance for High Speed VLSI Design

机译:高速VLSI设计的片上电感建模与表征

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Ever increasing circuit density, operating speed, faster on-chip rise times, use of low resistance Copper (Cu) interconnects, and longer wire lengths due to high level of integration in VLSI chip designs, have necessitated the need for modeling of wire inductive (L) effects which were ignored in the past. In this paper we will review different approaches of modeling the on-chip wire inductance, and discuss practical methods of assessing the inductance with special reference to return path in an IC chip. This will be followed by discussion on impact of inductance on performance of high speed VLIS. We then cover methods of validating the models using test chip approach.
机译:由于VLSI芯片设计中的高度集成,电路密度,工作速度,更快的片上上升时间,使用低电阻铜(Cu)互连以及使用更长的导线长度等不断增加的电路,都需要对导线电感( L)过去被忽略的效果。在本文中,我们将回顾对片上导线电感建模的不同方法,并讨论评估电感的实用方法,并特别参考IC芯片的返回路径。接下来将讨论电感对高速VLIS性能的影响。然后,我们介绍了使用测试芯片方法验证模型的方法。

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