Quality improvement of GaInNAs/GaAs quantum wells grown by MOCVD using tertiarybutylarsine

摘要

A highly strained GaInNAs/GaAs quantum well (/spl sim/+2%) was investigated by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using tertiarybutylarsine (TBAs) and dimethylhydrazine (DMHy). The V/III ratio was found to be an important parameter, especially for GaInNAs growth using TBAs based on MOCVD, which strongly affected both the photoluminescence intensity and alloy compositions. Further, we proposed a post-growth annealing procedure to improve the quality of GaInNAs quantum wells. The photoluminescence intensity was improved by a factor of 10 after annealing at 640/spl deg/C.