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Quality improvement of GaInNAs/GaAs quantum wells grown by MOCVD using tertiarybutylarsine

机译:MoCVD使用叔丁烷的高质量改善MOCVD的质量改进

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A highly strained GaInNAs/GaAs quantum well (/spl sim/+2%) was investigated by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using tertiarybutylarsine (TBAs) and dimethylhydrazine (DMHy). The V/III ratio was found to be an important parameter, especially for GaInNAs growth using TBAs based on MOCVD, which strongly affected both the photoluminescence intensity and alloy compositions. Further, we proposed a post-growth annealing procedure to improve the quality of GaInNAs quantum wells. The photoluminescence intensity was improved by a factor of 10 after annealing at 640/spl deg/C.
机译:使用叔丁烷(TBAS)和二甲基肼(DMHY),通过低压金属 - 有机化学气相沉积(LP-MOCVD)研究高度应变的GAINNAS / GAAs量子阱(/ SPL SIM / + 2%)。发现V / III比例是重要参数,特别是对于使用基于MOCVD的TBA的GAINNA生长,这强烈影响了光致发光强度和合金组合物。此外,我们提出了一次生长后退火程序,以提高Gainnas量子孔的质量。在640 / SPL DEG / C退火后,将光致发光强度提高了10倍10。

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