MOCVD growth of 980nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine

摘要

InGaAs/GaAs/AlGaAs quantum well (QW) structures have been grown at different temperatures by metalorganic chemical vapor deposition (MOCVD) with tertiarybutylarsine (TBAs) as the group V source, and it is found that the QW structures grown at 640 degrees C shows the strongest photoluminescence (PL) emission. Based on the optimized growth conditions, the InGaAs/GaAs/AlGaAs graded index (GRIN) separate confinement heterostructure (SCH) double quantum well lasers have been grown with TBAs. The 4-mu m-wide ridge waveguide lasers show room temperature continuous-wave lasing around 980 nm, with a typical threshold current of 14 mA, indicating that TBAs could be a promising alternative to the highly hazardous gas source AsH3 in growing InGaAs/GaAs/Al GaAs 980 rim QW lasers. (c) 2005 Elsevier B.V. All rights reserved.