Bandgap engineered InP-based power double heterojunction bipolar transistors

摘要

The bandgap engineering of InP-based DHBTs for power applications is demonstrated using chirped superlattices grown by GSMBE. The transport properties of electrons depend on the design parameters of the CSL and strongly affect the performance of the device. Excellent performance has been achieved. In the present paper, we describe device structure optimization, fabrication process and power performance of InP-based DHBTs at S, X, and K bands.