Abstract: Lithography is one of the most important techniques inthe IC fabrication and has been extensively used inprocessing. The high resolution and accuracy ofelectron beam lithography is most appropriate formaking mask of optical and X-ray lithography as well asdirect writing on wafer. Two types of resist, ZEP-520positive resist and SAL-601 negative resist, wereprepared for used in the electron beam lithography.Three different patterns, which include isolated line,contact hole and line and space patterns were exposedon the tungsten, oxide, and metal substrates,respectively. The 0.15 $mu@m resolution of lithographypatterns was achieved. For the etching of polysiliconand oxide, well defined profile of polysilicon gatewith 0.1 $mu@m width and well-defined tapered profilesof oxide contact hole have been obtainedsuccessfully.!3
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