Mask fabrication rules for proximity-corrected patterns

摘要

Abstract: Optical proximity correction (OPC) adds complex convolutions to mask pattern shapes which can stress mask-making capabilities. Because the `decorations' - jogs, serifs, assist features - created by proximity correction are approximations to `ideal' corrected shapes there are many variations of corrected mask shapes that provide the same result on the wafer. With an understanding of specific mask- making limitations it is possible to leverage this leeway to create more `mask friendly' patterns with OPC.!3