首页> 外国专利> Method enabling a standard CMOS fab to produce an IC to sense three-dimensional information using augmented rules creating mask patterns not otherwise expressible with existing fab rules

Method enabling a standard CMOS fab to produce an IC to sense three-dimensional information using augmented rules creating mask patterns not otherwise expressible with existing fab rules

机译:一种方法,使标准CMOS晶圆厂能够使用增强的规则来产生IC以感测三维信息,从而创建现有晶圆厂规则无法表达的掩模图案

摘要

CMOS implementable three-dimensional silicon sensors are fabricated using a standard fab but using augmented rules that create mask patterns not expressible with existing fab rules. Standard fab rules are not optimized to produce high quality three-dimensional silicon sensors. Accordingly, the normal set of rules does not permit creating the fab mask patterns necessary for high performance such sensors. However, the present invention can use the fab standard mask set with a rich set of fab instructions to express mask patterns from the mask set that would not otherwise be expressible. The resultant method enables high quality silicon sensors for three-dimensional sensing to be readily mass produced from a standard fab.
机译:CMOS可实现的三维硅传感器是使用标准fab制造的,但使用的增强规则会创建现有fab规则无法表达的掩模图案。没有优化标准晶圆厂规则以生产高质量的三维硅传感器。因此,正常的规则集不允许创建高性能的此类传感器所需的fab掩模图案。然而,本发明可以使用具有丰富的fab指令集的fab标准掩模集来从掩模集中表达掩模图案,否则该掩模图案将无法被表达。所产生的方法使得用于三维感测的高质量硅传感器能够容易地从标准晶圆厂大量生产。

著录项

  • 公开/公告号US7464351B2

    专利类型

  • 公开/公告日2008-12-09

    原文格式PDF

  • 申请/专利权人 CYRUS BAMJI;XINQIAO LIU;

    申请/专利号US20040028290

  • 发明设计人 CYRUS BAMJI;XINQIAO LIU;

    申请日2004-12-30

  • 分类号G06F17/50;

  • 国家 US

  • 入库时间 2022-08-21 19:28:43

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