Mask blank fabrication, pattern transfer, and mounting distortion simulations for the 8-in. Format SCALPEL mask

摘要

The electron-beam projection lithography technique known as scattering with angular limitation projection electron-beam lithography (SCALPEL) is capable of producing linewidths of 100 nm and smaller, making it a leading candidate for replacing the current lithographic technique, deep ultraviolet (DUV). Critical to the success of SCALPEL is the creation of a low-distortion mask. Finite element modeling allows for the efficient identification of pattern-specific distortions of the mas, membrane. Results pertinent to the current design of the 8-in. Format mask are presented.