A 0.1-/spl mu/m self-aligned-gate GaAs MESFET with multilayer interconnection structure for ultra-high-speed ICs

摘要

We have developed the technologies to fabricate about 0.1-/spl mu/m-gate-length GaAs MESFETs with a multilayer interconnection structure. We fabricated excellent high-frequency performance of a 0.06-/spl mu/m-gate-length MESFET having current-gain cutoff frequency (f/sub T/) of 168 GHz. Using 0.13-/spl mu/m-gate-length MESFETs, we also fabricated an ultra-high-speed decision circuit operating up to 32 Gbit/s.