Abstract: An intralevel mix match resist technology is described using modeling and simulation methods. The two dimensional description of the process contains a Monte-Carlo calculation for the e-beam exposure, a model for the interaction of electrons with the resist, a simulation of the i-line exposure, a calculation for the silylation and for a final dry development step (O$- 2$/-RIE). The simulation is supported by experiments where a structuring down to 50 nm is achieved. !10
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