Single-step annealing of Be and Si implants in S.I. InP to minimize Be redistribution in the completed p/sup +/ junctions

摘要

The electrical characteristics of p/sup +/ junctions in semi-insulating InP, formed by using a deep Si implant and a shallow Be implant, are reported. Both the electrical and atomic profiles found by the investigation indicate that the anneal-induced redistribution of Be can be prevented if the Be and Si implants are activated in a single-step anneal. In addition it was found that prolonged anneal time and elevated temperatures have significantly reduced Be compensation near the surface.