REDISTRIBUTION OF A DOPANT DURING ANNEALING OF RADIATION DEFECTS IN A MULTILAYER STRUCTURE BY LASER SCANS FOR PRODUCTION OF AN IMPLANTED-JUNCTION RECTIFIER

摘要

In this paper, we analyze dopant redistribution in a multilayer structure during laser scan annealing of radiation defects for the production of an implanted-junction rectifier, taking account of the temperature dependence of the diffusion coefficient. It is shown that inhomogeneity of the structure leads to increase in the sharpness of the implanted-junction rectifier and the homogeneity of the dopant distribution in the doped area. Some conditions on properties of the considered multilayer structure, which correspond to increase in the sharpness and the homogeneity, are determined.