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Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants
Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants
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机译:沉积高消光系数非剥离光吸收剂的低温工艺,用于注入掺杂物的扫描激光表面退火
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摘要
A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.
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