Structural and Optical Properties of PbS Thin Films Deposited by Pulsed Laser Deposited (PLD) Technique at Different Annealing Temperature

摘要

Lead sulphide (PbS) thin films has attracted interest due to its potential applications in optoelectronics devices, gas sensors, solar cell technology and transparent conducting electrodes. Thin films were grown on glass substrates by pulsed laser deposition (PLD) technique at room temperature and different annealing temperatures (573, 673 and 773) K. The structural measurements for PbS thin film show face-centered-cubic structure. Atomic force microscopy (AFM) was used to examine PbS surface. The films exhibit more homogeneity. The root mean square(r.m.s), surface roughness and average grain size were increased After annealing. The optical properties of PbS thin films are studied as a function to wavelength in region (375 - 1100) nm. The optical transmittance of PbS thin films shown that the transparency decreases with increase of annealing temperature. The direct energy gap for PbS thin film was decreases with increasing of annealing temperature for all sample due to the growth of the crystallites. The optical constants such as refractive index, extinction coefficient and dielectric constant were also calculated.