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Solder bump fabrication by electroplating for flip-chip applications

机译:倒装芯片通过电镀制造焊料凸块

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A step-by-step description of a solder alloy bumping process for flip-chip application is discussed. Emphasis is placed on a 75-/spl mu/m high bump, as plated, with a pitch of 125-/spl mu/m array pattern is successfully achieved using conventional positive photoresist masking. The under-bump metallurgy (UBM) is sputtered Ti/Cu. The Sn/Pb composition of solder alloy such as 60/40 or 5/95 and the etchants used on the exposed UBM are discussed. This process is compatible with other IC wafer processes. The solder bump reflow is achieved utilizing a rosin flux and hot plate which is closely controlled in temperature and environment.
机译:讨论了倒装芯片应用的焊料合金凸点工艺的分步说明。重点放在电镀后的75- / splμm/ m的高凸点上,使用常规的正性光刻胶掩膜可以成功实现125- / splμm/ m的阵列间距。凸块下冶金(UBM)是溅射的Ti / Cu。讨论了诸如60/40或5/95之类的焊料合金的Sn / Pb组成以及在暴露的UBM上使用的蚀刻剂。该工艺与其他IC晶片工艺兼容。利用松香助焊剂和热板实现了焊料凸点的回流,该松香和热板的温度和环境受到严格控制。

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