Low temperature deposition of SiO/sub 2/ on InP substrates by DECR PECVD

摘要

The low temperature deposition of SiO/sub 2/ thin films onto InP substrates is discussed. It is shown that the physical and chemical properties of SiO/sub 2/ thin films are stable over a three month period. X-ray photoelectron spectroscopy (XPS) analysis of the chemistry of the SiO/sub 2/-InP interface reveals the presence of an interfacial substrate oxide. The MIS C(V) characteristics exhibit low frequency dispersion and a deep depletion regime, but it is shown that the measurement procedure can significantly affect the fixed charge and interface state density determination.