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Impact of the Cu-based substrates and catalyst deposition techniques on carbon nanotube growth at low temperature by PECVD

机译:铜基基底和催化剂沉积技术对PECVD低温下碳纳米管生长的影响

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摘要

This article reports on carbon nanotubes (CNT) grown on TiN/Cu stacks by plasma enhanced chemical vapor deposition (PECVD) at 450℃ Ni catalyst was deposited by two techniques - physical vapor deposition (PVD) and electrochemical deposition (ECD). First, the influence of the catalyst thickness and the catalyst deposition technique on grown CNTs is investigated. Second, the enhancement of the CNTs growth by use of electrodeposited catalysts is emphasized.
机译:本文报道了在450℃下通过等离子增强化学气相沉积(PECVD)在TiN / Cu叠层上生长的碳纳米管(CNT),通过两种技术沉积Ni催化剂-物理气相沉积(PVD)和电化学沉积(ECD)。首先,研究了催化剂厚度和催化剂沉积技术对生长的CNT的影响。其次,强调了通过使用电沉积催化剂来增强CNT生长。

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