High power and high temperature operation of 1.5 mu m wavelength strained-layer InGaAs/InGaAsP SIPBH lasers

摘要

It is demonstrated that high performance lasers can be obtained not only with compressively strained quantum wells (QWs) but also with tensile strained QWs. In addition to low threshold current (density) and high power operation, the tensile strained multiple quantum well semi-insulating planar buried heterostructure (MQW SIPBH) lasers show excellent high temperature operation (up to 140 degrees C). Compressively strained MQW SIPBH lasers are found to operate CW at record low threshold current values (0.8 mA) and record high output power (325 mW). It is concluded that both the band structure modifications induced by the strain and the quantum confinement. as well as the effective current confinement by means of semi-insulating InP, result in very high performance strained-layer MQW-SIPBH lasers.