High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

摘要

Improved performance of 1.5- mu m wavelength lasers and laser amplifiers using strained In/sub x/Ga/sub 1-x/As-InGaAsP quantum well devices is reported. The device structures fabricated to study the effects of strained quantum wells on their performance are described. These devices showed TM mode gain, demonstrating the strain-induced heavy-hole-light hole reversal in the valence band. Lasers using these tensile strained quantum wells show higher and narrower gain spectra and laser amplifiers have a higher differential gain compared to compressively strained quantum well devices. Consequently, the tensile strained quantum well lasers show the smallest linewidth enhancement factor alpha =1.5 (compression alpha =2.5) and the lowest K-factor of 0.22 ns (compression K=0.58 ns), resulting in an estimated intrinsic 3 dB modulation bandwidth of 40 GHz (compression 15 GHz).