VERTICAL CAVITY LASER EMISSION COMPONENT WITH SURFACE EMISSION AT A WAVELENGTH BETWEEN 1.3 AND 1.5 MU M AND METHOD FOR THE PRODUCTION THEREOF

摘要

P Laser emission component with vertical cavity emitting by the surface at a wavelength between 1.3 and 1.55 mum, comprising a stack having two mirrors (2, 6) which reflect the length of emission wave and one or more layers (4) which are interposed between these two mirrors (2, 6) and which constitute an amplifying medium for the emitted radiation, characterized in that at least one (2) of these mirrors present in the vicinity of the amplifying medium (4) a layer (2a) of Alx Ga1-x As, with x between 0.8 and 1, selectively oxidized (2ai and 2aii) around an active central zone of the amplifying medium (4). BR/ In the production method, two samples are grown by epitaxy, one on an InP substrate, the other on a GaAs substrate and the two samples thus obtained are assembled by epitaxial bonding. of a layer of GaAs of the second sample on a layer of InP of the first, the sample thus obtained is both etched and then oxidized by hydrolysis. /P