首页> 外国专利> Component of the emission laser cavity has a vertical transmission by the surface has a wavelength between 1,3 and 1,5 mu m, a

Component of the emission laser cavity has a vertical transmission by the surface has a wavelength between 1,3 and 1,5 mu m, a

机译:发射激光腔的组件具有垂直传输,其表面的波长在1,3至1,5微米之间,

摘要

Component of the laser emission to vertical cavity surface emitting at a wavelength between 1,3 and 1,55, comprising a stack having two mirrors (2, 6) which is reflected at the wavelength of emission and one or more layers (4) which are interposed (s) between these two mirrors (2, 6) and which constitute an amplifier medium of the emitted radiation, characterized in that at least one (2) of these mirrors present in the vicinity of the amplifier medium (4) a layer (2a) of alx ga1 - x as, for x included between 0,8 and 1, selectively oxidized (2ai and 2aii) around an active central area of the amplifier medium (4). br / in the process of the invention, are grown epitaxially two samples on an inp substrate, the other on a gaas substrate and the two samples thus obtained by epitaxial adhesion of a layer of gaas of the second sample on an inp layer of the first, the sample thus obtained is then etched, and then oxidized by hydrolysis.
机译:激光发射到垂直腔表面的组件,发射波长在1,3和1,55之间,包括具有两个反射镜(2,6)和一个或多个层(4)的堆栈,两个反射镜(2,6)在发射波长处反射在这两个反射镜(2、6)之间插入一个或多个反射镜,它们构成发射辐射的放大介质,其特征在于,这些反射镜中的至少一个(2)存在于放大介质(4)附近。 Alx ga1-x的(2a),对于x包括在0.8和1之间,在放大器介质(4)的活性中心区域周围被选择性地氧化(2ai和2aii)。在本发明的方法中,将两个样品外延生长在一个inp衬底上,另一个在gaas衬底上生长,然后通过将第二个样品的gaas层外延粘附在inp衬底的inp层上获得两个样品。首先,将如此获得的样品蚀刻,然后通过水解氧化。

著录项

  • 公开/公告号FR2739230B1

    专利类型

  • 公开/公告日1997-12-19

    原文格式PDF

  • 申请/专利权人 OUDAR JEAN LOUIS;

    申请/专利号FR19950011158

  • 发明设计人

    申请日1995-09-22

  • 分类号H01S3/06;

  • 国家 FR

  • 入库时间 2022-08-22 02:42:06

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