Single-quantum-well strained-layer InGaAs-InGaAsP lasers for the wavelength range from 1.43 to 1.55 mu m

摘要

Strained-layer single-quantum-well InGaAs-InGaAsP lasers have been fabricated using a novel self-aligned-contact ridge guide structure. The lasers operate with index-guided fundamental transverse mode. The laser cavity length and mirror reflectivities were chosen to achieve laser oscillation in the wavelength range from 1.43 to 1.55 mu m. It is shown that a fiber amplifier pump laser at 1.47 mu m wavelength and a transmission source laser at 1.55 mu m wavelength can be fabricated from a single wafer grown by metalorganic vapor phase epitaxy (MOVPE).