Growth of Be-doped InP by gas-source molecular beam epitaxy

摘要

Results of standard Hall and low temperature photoluminescence (PL) measurements of Be-doped InP grown by gas-source molecular beam epitaxy (GSMBE) are presented. The hole concentration increases with increasing Be-source temperature up to 850 degrees C, p=1*10/sup 19/ cm/sup -3/, and, beyond this temperature, a high compensation reducing the hole concentration occurs. The PL results indicate that at the highest Be incorporations a significant number of donors are introduced into the crystal in addition to the Be acceptors. At Be cell temperature less than 890 degrees C only acceptors are observed, and the ionization energy of Be acceptors at this doping region in InP was measured to be (34+or-2) meV.