Mechanism of selective area growth of InP on Si(001) substrates using SiO_2 mask by gas-source molecular beam epitaxy

摘要

X-ray photoemission spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED) have been used to investigate the initial stages of InP growth on H-terminated Si and native Si oxide surfaces. By annealing at 800 ℃, the H-terminated Si surface exhibits a (2 × 1) RHEED pattern while the native oxide surface just shows a halo RHEED pattern. After exposing them to P_2 flux, the Si(2 × 1) clean surface exhibits a (2 × 1) RHEED pattern while the native Si oxide layer always shows the halo RHEED pattern. XPS measurement reveals that while P atoms adsorb on the Si(2 × 1) surface, the adsorption of P atoms does not take place on the native Si oxide surfaces. In consequence of the difference in the adsorption of P atoms between the clean Si and Si oxide surfaces, InP does not grow on the Si oxides at temperatures above 450 ℃ while InP grows on the clean Si substrates. Based on the findings, we will discuss the mechanism of the selective area growth of InP on patterned Si substrates with Si oxide mask in terms of desorption of In and P.