Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)

摘要

Vibrational spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001) alloys are obtained using a Fourier-transform infrared (IR) spectroscopy. A triply degenerate NAs local vibrational mode of Td-symmetry is observed near 438 cm-1 corresponding to the In-N bond energy. The analysis of composition dependent infrared reflectivity spectra in InNAs has predicted a two-phonon-mode behavior. In In(Ga)-rich GaInNAs alloys the observed splitting of the NAs local mode into a doublet for the NAs–Ga1(In1)In3(Ga3) pair-defect of C3v-symmetry is consistent with our simulated results based on a sophisticated Green's function theory.