MOS trench gate field-controlled thyristor

摘要

A novel device structure for a field-controlled thyristor (FCT) utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. Two-dimensional computer modeling of static and dynamic characteristics was performed. This device exhibits a good forward conduction characteristic with a low forward voltage drop at high current densities. Simulation results on transient turn-off showed a turn-off capability of 500 A/cm/sup 2/ with the use of a reasonable gate bias. Experimental devices of the UMOS FCT were designed and fabricated. A turn-off current of 3.8 A with a very high turn-off current gain has been achieved.