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Linearity Enhancement in Asymmetric Self-Cascode Composed by FD SOI nMOSFETs

机译:FD SOI nMOSFET组成的非对称自共源共栅的线性增强

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摘要

In this paper, the linearity of the Asymmetric Self-Cascode composed by Fully Depleted SOI nMOSFETs is experimentally evaluated, using transistors with different channel lengths. The abnormal (flat) transconductance of this composite transistor is used to promote a linearity enhancement. Disregarding the gain, the minimum harmonic distortion for low-power low-voltage applications has been obtained for the shortest transistor near the source and longest transistor near the drain.
机译:在本文中,使用不同沟道长度的晶体管,通过实验评估了由完全耗尽SOI nMOSFET组成的非对称自Cascode的线性。该复合晶体管的异常(平坦)跨导用于促进线性度的提高。忽略增益,对于源极附近最短的晶体管和漏极附近最长的晶体管,已经获得了低功率低压应用的最小谐波失真。

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