机译:非对称沟道掺杂分布和温度降低对使用FD SOI nMOSFET实现的电流镜性能的影响
Electrical Engineering Department. Centra Umversitario da FEI, Av. Humberto de Alencar Castelo Branca 3972. 09850-901 Sao Bernardo do Campo, Brazil;
Electrical Engineering Department. Centra Umversitario da FEI, Av. Humberto de Alencar Castelo Branca 3972. 09850-901 Sao Bernardo do Campo, Brazil;
Electrical Engineering Department (ELEN), ICTEAM Institute. UCLouvain. Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium;
Electrical Engineering Department. Centra Umversitario da FEI, Av. Humberto de Alencar Castelo Branca 3972. 09850-901 Sao Bernardo do Campo, Brazil;
机译:减少侧向渐变沟道掺杂分布的0.1- / splμ/ m嵌入式沟道nMOSFET中热载流子的产生
机译:分析在低温下使用渐变沟道SOI nMOSFET实现的源极跟随器缓冲器
机译:分析在低温下使用渐变沟道SOI nMOSFET实现的源极跟随器缓冲器
机译:在较宽的温度范围内,采用渐变沟道SOI nMOSFET实现的共源,Cascode和Wilson电流镜的性能
机译:完全耗尽的Δ沟道SOI NMOSFET的实现
机译:几何参数对非对称自级码FD SOI NMOSFET的DC模拟行为的影响