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Thermal Simulation Modeling of IGBT Module Using Silver Nanoparticle Sintering Material

机译:银纳米粒子烧结材料对IGBT模块的热仿真建模

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Because its low sintering temperature, high melting point, excellent mechanical reliability, high electrical and thermal conductivities, silver nanoparticle sintering has the potential to be applied in high power electronic packaging as an alternative lead-free chip attach material. In this paper, IGBT simulation model of the double-sided cooling package is built, and the different chip attach materials of traditional Sn/Ag materials and silver nanoparticle sintering materials are compared.ANSYS is applied to simulate and analyze thermal distribution of the model. Results show that the IGBT module which adopts silver nanoparticle sintering material in the same boundary conditions, and the maximum chip temperature of the module is 77.1907 °C, 14.14% lower than the traditional Sn/Ag material. This analysis can be further applied that the thermal properties of Silver nanoparticle sintering materials are better than that of traditional Sn / Ag materials.
机译:由于其低的烧结温度,高的熔点,优异的机械可靠性,高的电导率和热导率,因此银纳米粒子烧结有潜力作为替代无铅芯片连接材料应用于高功率电子封装中。本文建立了双面冷却封装的IGBT仿真模型,比较了传统Sn / Ag材料和银纳米颗粒烧结材料的不同芯片贴附材料,并利用ANSYS对模型的热分布进行了仿真和分析。结果表明,在相同的边界条件下采用银纳米粒子烧结材料的IGBT模块,其最高芯片温度为77.1907°C,比传统的Sn / Ag材料低14.14%。可以进一步应用该分析,银纳米粒子烧结材料的热性能优于传统的Sn / Ag材料。

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