Effect of Ion Flux in Source-Drain Extension Ion Implantation for 10-nm Node FinFet and beyond on 300/450mm Platforms

摘要

The effects of very high ion flux and very large ion beam current need to be investigated if very high ion flux is to be considered as a method of throughput increase for high-current ion implantation. In this work, Synopsys TCAD Sentaurus was used to simulate As ion implantation in order to obtain silicon amorphization and dopant distribution data. The TEM images are consistent with TCAD simulation results. The device performance of the simulated Id-Vg curves for 10-nm node silicon FinFET was evaluated. It was determined that higher ion flux results in more As dopants in the channel at the same beam dose. The effects of the FinFET device performance, including current on/off ratio, and subthreshold swing, were studied. It was concluded the high ion flux does not have a detrimental impact on the FinFET electrical parameters examined in this work when the dose is chosen properly.