System and method for source-drain extension in FinFETs

摘要

A fin-type field effect transistor (finFET) device includes a gate disposed over at least two fins, each fin defining a source outboard portion and a drain outboard portion extending beyond the gate. There is a source contact that electrically connects the source outboard portions of the fins, and similarly on the opposed side of the gate there is a drain contact electrically connecting the drain outboard portions of the fins. A first dielectric spacer layer is disposed adjacent to the gate and overlying the fins, and a second dielectric spacer layer is disposed adjacent to the first spacer layer and also overlying the fins. The second dielectric spacer layer electrically isolates the gate from the drain contact and/or from the source contact. A method of making a finFET device is also detailed.