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Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching and the FinFETs thereof
Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching and the FinFETs thereof
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机译:通过蚀刻减小FinFET的源极-漏极侧壁间隔物的高度的方法及其FinFET
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摘要
An integrated circuit device includes a semiconductor substrate, insulation regions extending into the semiconductor substrate, and a semiconductor fin protruding above the insulation regions. The insulation regions have a first portion and a second portion, with the first portion and the second portion on opposite sides of the semiconductor fin. The semiconductor fin has a first height. The integrated circuit device further includes a gate stack over a middle portion of the semiconductor fin, and a fin spacer on a sidewall of an end portion of the semiconductor fin. The fin spacer has a second height. The first height is greater than about two times the second height.
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